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Four Sources Magnetron Sputtering (2" to 4") Deposition System (PVD4-SP+)

 The PVD4-SP+ system differs from PVD4-SP by greater diameter chamber thereby permitting the use of magnetron cathodes larger (up to 4 inches) and the film deposition on a 6’’ sample maximum size.

This system is also equipped with a load lock chamber to reach a limit pressure in the range of 10-8 mbar and faster preparation time.

 MAIN SPECIFICATIONS

  • Stainless steel chamber – 400 mm diameter 
  • HV load-lock chamber
  • Free port for coupling complete system to an UHV tunnel
  • Up to 2’’ substrate diameter with rotation, heating, biasing
  • Up to 4x 2” sputtering sources with pneumatic shutters
  • Shielding against cross contamination
  • Translatable crystal sensor for calibration
  • RF, DC or DC Pulsed source power supplies
  • Turbo pumping group
  • Pressure control
  • Up to 4 MFCs
  • In Situ 2D Curvature and Thin-Film Stress Monitoring
  • In situ ellipsometry
  • Supervision/ Process control: PC software connected to a PLC


PERFORMANCES

  • Thickness Homogeneity < < ± 5%
  • Vacuum Base Pressure (deposition chamber) 10-8 mbar
  • Heating up to 800°C under oxygen rich environment
  • Adjustable distance from source to substrate (100 mm stroke)
  • From simple to complex layers
PVD4-SP+  with loadlock connected to a UHV linear transfer tunnel through a turntable chamber 

Sputtering with loadlock