UHV-E series Beam & MBE Deposition System
Description
The UHV-E series allows thin film deposition at pressure less than 10-10 mbar. The systems are equipped with a load lock chamber to keep a low pressure in the process chamber that allows the synthesis of complex materials and crystalline structures.
Features
* 10 -10 mbar chamber including cryopanel
* 5 axis substrate manipulator (-120°C to +1500°C)
* 1 or 2 UHV e-beam sources / Up to 4 MBE sources
* 18 material sources
* 3 sensors for thickness measurement
* Turbomolecular and ion pumps
* RHEED, LEED analysis
* Load lock with samples storage
* Compatible with sample transfer tunnel and glove box
* Scalable system
Benefits
* Fast pumping speed
* Pressure Management
* Thickness Monitoring
* Scalability
* Design flexibility
* Compact